BAW101V-7 Ver la hoja de datos (PDF) - Diodes Incorporated.
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componentes Descripción
Fabricante
BAW101V-7 Datasheet PDF : 4 Pages
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Features
• Fast Switching Speed: Maximum of 50ns
• High Reverse Breakdown Voltage: 325V for Single Diode or
650V for Series Connection
• Two Electrically Isolated Elements in a Single Compact Package
• Low Leakage Current: Maximum of 50nA when VR = 5V or
Maximum of 150nA when VR = 250V at Room Temperature
• Thermally Efficient Copper Alloy leadframe for High Power
Dissipation
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
BAW101V
HIGH VOLTAGE DUAL SWITCHING DIODE
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
654
Top View
Bottom View
123
Device Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
Single Diode
Series Connection
VRRM
325
650
V
Working Peak Reverse Voltage
DC Blocking Voltage
Single Diode
VRWM
325
Series Connection
VR
650
V
RMS Reverse Voltage
Forward Current (Note 2)
VR(RMS)
230
V
Single Diode Loaded
Double Diode Loaded
IF
250
140
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
IFSM
8.0
A
Repetitive Peak Forward Current @ t = 8.3ms (Note 2)
IFRM
3.0
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
500
250
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Reverse Current (Note 1)
Total Capacitance
Reverse Recovery Time
Symbol
Min
V(BR)R
300
VF
⎯
⎯
IR
⎯
⎯
CT
⎯
trr
⎯
Max
⎯
1.1
50
150
50
2.0
50
Unit
V
V
nA
nA
μA
pF
ns
Test Condition
IR = 100μA
IF = 100mA
VR = 5V
VR = 250V
VR = 250V, TJ = 150°C
VR = 0, f = 1.0MHz
IF = IR = 30mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead. Halogen and Antimony Free.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
BAW101V
Document number: DS32178 Rev. 4 - 2
1 of 4
www.diodes.com
September 2010
© Diodes Incorporated
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