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Número de pieza
componentes Descripción
BAV99S Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BAV99S
Silicon Switching Diode
Infineon Technologies
BAV99S Datasheet PDF : 8 Pages
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BAV99...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t
= 1 µs
V
R
V
RM
I
F
I
FSM
t
= 1 ms
t
= 1 s, single
t
= 1 s, double
Total power dissipation
P
tot
BAV99,
T
S
≤
28°C
BAV99F,
T
S
≤
tbd
BAV99S,
T
S
≤
85°C
BAV99T,
T
S
≤
104°C
BAV99U,
T
S
≤
113°C
BAV99W,
T
S
≤
110°C
Junction temperature
T
j
Storage temperature
T
stg
Thermal Resistance
Parameter
Junction - soldering point
1)
BAV99
BAV99F
BAV99S
BAV99T
BAV99U
BAV99W
Symbol
R
thJS
Value
80
85
200
4.5
1
0.5
0.75
330
250
250
250
250
250
150
-65 ... 150
Value
≤
360
≤
tbd
≤
260
≤
185
≤
150
≤
160
1
For calculation of
R
thJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mW
°C
Unit
K/W
2
Mar-10-2004
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