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Número de pieza
componentes Descripción
BAV99S-E6327 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BAV99S-E6327
Silicon Switching Diode
Infineon Technologies
BAV99S-E6327 Datasheet PDF : 13 Pages
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BAV99...
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t
= 1 µs
V
R
V
RM
I
F
I
FSM
t
= 1 ms
t
= 1 s, single
t
= 1 s, double
Value
80
85
200
4.5
1
0.5
0.75
Total power dissipation
BAV99,
T
S
≤
28°C
BAV99S,
T
S
≤
85°C
BAV99U,
T
S
≤
113°C
BAV99W,
T
S
≤
110°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAV99
BAV99S
BAV99U
BAV99W
P
tot
T
j
T
stg
Symbol
R
thJS
330
250
250
250
150
-65 ... 150
Value
≤
360
≤
260
≤
150
≤
160
1
For calculation of
R
thJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mW
°C
Unit
K/W
2
2007-09-19
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