BAV170T Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

BAV170T

SURFACE MOUNT LOW LEAKAGE DIODE

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

Reverse Breakdown Voltage (Note 2)

V(BR)R

IR = 100 A

IF = 1.0 mA

Forward Voltage (Note 2)

IF = 10 mA

VF

IF = 50 mA

IF = 150 mA

Leakage Current (Note 2)

VR = 75 V

IR

VR = 75 V; Tj = 150

Total Capacitance

CT

f = 1 MHz; VR = 0 V

Reverse Recovery Time

IF = IR = 10mA,

trr

Irr = 0.1 x IR, RL = 100

Note

2.Short duration test pulse used to minimize self-heating effect.

Product specification

BAV170T; BAV199T

Min

Typ

Max

Unit

85

V

0.90

1.0

V

1.1

1.25

5.0

nA

80

2

pF

3.0

ìs

Marking

Type

Marking

BAV170T

51

BAV199T

52

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sales@twtysemi.com

4008-318-123

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