BAV199DW-SOT-363 Ver la hoja de datos (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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BAV199DW-SOT-363

SOT-363 Plastic-Encapsulate Diodes

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-363 Plastic-Encapsulate Diodes

BAV199DW Multi-Chip DIODES

FEATURES

Power dissipation

PCM: 0.2 W (Tamb=25℃)

Collector current

IF : 200 mA

Collector-base voltage

VR : 85

V

Operating and storage junction temperature range

TJ,Tstg: -55℃ to +150℃

MARKING:K52

SOT-363

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

Junction capacitance

Reveres recovery time

Symbol

Test conditions

V(BR) R

IR= 100µA

IR

VR=75V

IF=1mA

VF

IF=10mA

IF=50mA

IF=150mA

Cj

VR=0V f=1MHz

IF=IR=10mA

trr

Irr=0.1ХIR

RL=100Ω

MIN

TYP

85

2

MAX

5

0.9

1.0

1.1

1.25

3

UNIT

V

nA

V

pF

nS

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