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BAT54ALT1G(2005) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
BAT54ALT1G
(Rev.:2005)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
BAT54ALT1G Datasheet PDF : 4 Pages
1 2 3 4
BAT54ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
30
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mAdc)
VF
Forward Voltage
(IF = 30 mAdc)
VF
Forward Voltage
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
Forward Voltage
(IF = 1.0 mAdc)
VF
Forward Voltage
(IF = 10 mAdc)
VF
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
(t < 1.0 s)
IF
IFRM
IFSM
Typ
7.6
0.5
0.22
0.41
0.52
0.29
0.35
Max
Unit
V
10
pF
2.0
mAdc
0.24
Vdc
0.5
Vdc
0.8
Vdc
5.0
ns
0.32
Vdc
0.40
Vdc
200
mAdc
300
mAdc
600
mAdc
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