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BAS521 Datasheet PDF : 11 Pages
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NXP Semiconductors
BAS521
Single high-voltage switching diode
500
IF
(mA)
400
mhc618
300
200
100
(1) (2) (3)
0
0
0.5
1 VF (V) 1.5
(1) Tamb = 150 °C
(2) Tamb = 75 °C
(3) Tamb = 25 °C
Fig 1. Forward current as a function of forward
voltage; typical values
300
IF
(mA)
mhc620
200
102
IR
(μA)
10
mhc619
1
10−1
10−2
0
40
80
120
160
200
Tj (°C)
VR = VRmax
Fig 2. Reverse current as a function of junction
temperature; typical values
0.42
Cd
(pF)
mhc621
0.38
100
0.34
0
0
50
100
150
200
Tamb (°C)
Fig 3. Forward current as a function of ambient
temperature; derating curve
0.3
0
10
20
30
40
VR (V)
Fig 4.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
BAS521
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 5 November 2010
© NXP B.V. 2010. All rights reserved.
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