BAS32L(1996) Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BAS32L
(Rev.:1996)

High-speed diode

Philips Electronics 

Philips Semiconductors

High-speed diode

Product specification

BAS32L

103

handbook, halfpage

IR

(µA)

102

10

MGD006

(1)

(2)

(3)

1

10−1

10−2

0

100

Tj (oC)

200

(1) VR = 75 V; maximum values.

(2) VR = 75 V; typical values.

(3) VR = 20 V; typical values.

Fig.5 Reverse current as a function of

junction temperature.

1.2

handbook, halfpage

Cd

(pF)

1.0

0.8

0.6

0.4

0

MGD004

10

VR (V)

20

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1996 Sep 10

5

Share Link: