BAS32L(1996) Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
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Fabricante
BAS32L Datasheet PDF : 7 Pages
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Philips Semiconductors
High-speed diode
Product specification
BAS32L
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
V(BR)R
Cd
trr
reverse breakdown voltage
diode capacitance
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
see Fig.3
IF = 5 mA
IF = 100 mA
IF = 100 mA; Tj = 100 °C
see Fig.5
VR = 20 V
VR = 75 V
VR = 20 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C
IR = 100 µA
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
MIN.
620
−
−
−
−
−
−
100
−
MAX. UNIT
750 mV
1000 mV
930 mV
25 nA
5 µA
50 µA
100 µA
−V
2 pF
4 ns
2.5 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CONDITIONS
VALUE
300
350
UNIT
K/W
K/W
1996 Sep 10
3
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