BAS32L(1996) Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

BAS32L
(Rev.:1996)

High-speed diode

Philips Electronics 

Philips Semiconductors

High-speed diode

Product specification

BAS32L

FEATURES

• Small hermetically sealed glass

SMD package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 75 V

• Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

• High-speed switching

• Fast logic applications.

DESCRIPTION

The BAS32L is a high-speed switching diode fabricated in planar technology,

and encapsulated in the small hermetically sealed glass SOD80C SMD

package.

handbook, 4 columns

k

a

MAM061

Cathode indicated by black band.

Fig.1 Simplified outline (SOD80C) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VRRM

VR

IF

IFRM

IFSM

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

CONDITIONS

see Fig.2; note 1

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t=1s

Tamb = 25 °C; note 1

Note

1. Device mounted on an FR4 printed-circuit board.

MIN.

−

−

−

−

MAX.

75

75

200

450

UNIT

V

V

mA

mA

−

4A

−

1A

−

0.5 A

−

500 mW

−65 +200 °C

−

200 °C

1996 Sep 10

2

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