BAS19-V Ver la hoja de datos (PDF) - Vishay Semiconductors
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Fabricante
BAS19-V Datasheet PDF : 5 Pages
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BAS19-V, BAS20-V, BAS21-V
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Value
Unit
BAS19-V
VR
100
V
Continuous reverse voltage
BAS20-V
VR
150
V
BAS21-V
VR
200
V
BAS19-V
VRRM
120
V
Repetitive peak reverse voltage
BAS20-V
VRRM
200
V
BAS21-V
VRRM
250
V
Non-repetitive peak forward
current
t = 1 µs
IFSM
2.5
A
Non-repetitive peak forward
surge current
t=1s
IFSM
0.5
A
Maximum average forward
rectified current
(av. over any 20 ms period)
IF(AV)
200 1)
mA
DC forward current
IF
200 2)
mA
Repetitive peak forward current
IFRM
625
mA
Power dissipation
Ptot
250 2)
mW
1) Measured under pulse conditions; Pulse time = Tp ≤ 0.3 ms
2) Device on fiberglass substrate, see layout on next page
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
RthJA
430 1)
°C
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
1) Device on fiberglass substrate, see layout on next page
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 100 mA
VF
IF = 200 mA
VF
1.0
V
1.25
V
Leakage current
VR = VRmax.
IR
VR = VRmax., Tj = 150 °C
IR
100
nA
100
μA
Dynamic forward resistance
IF = 10 mA
rf
5
Ω
Diode capacitance
VR = 0, f = 1 MHz
Ctot
5
pF
Reverse recovery time
IF = IR = 30 mA, RL = 100 Ω,
Irr = 3 mA
trr
50
ns
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number 85540
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 10-Nov-10
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