BAS16LD Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAS16LD Datasheet PDF : 11 Pages
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NXP Semiconductors
8. Test information
BAS16LD
Single high-speed switching diode
RS = 50 Ω
V = VR + IF × RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
t
+ IF
trr
t
(1)
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig 6. Reverse recovery time test circuit and waveforms
I
1 kΩ
450 Ω
RS = 50 Ω
D.U.T.
OSCILLOSCOPE
Ri = 50 Ω
I
90 %
10 %
tr
tp
input signal
V
VFR
t
t
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig 7. Forward recovery voltage test circuit and waveforms
BAS16LD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
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