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BAS16LD Datasheet PDF : 11 Pages
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NXP Semiconductors
BAS16LD
Single high-speed switching diode
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
IR
reverse current
VR = 25 V
VR = 80 V
VR = 25 V; Tj = 150 °C
VR = 80 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr
reverse recovery time
VFR
forward recovery voltage
Min Typ
[1]
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[2] -
-
[3] -
-
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[3] When switched from IF = 10 mA; tr = 20 ns.
Max Unit
715 mV
855 mV
1
V
1.25 V
30 nA
0.5 μA
30 μA
50 μA
1.5 pF
4
ns
1.75 V
BAS16LD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
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