BAR63V-04W
Vishay Semiconductors
VISHAY
Parameter
Forward resistance
Charge carrier life time
Test condition
Symbol
Min
Typ.
Max
Unit
f = 100 MHz, IF = 1 mA
rf
2.0
Ω
f = 100 MHz, IF = 5 mA
rf
1.1
2.0
Ω
f = 100 MHz, IF = 10 mA
rf
0.9
Ω
IF = 10 mA, IR = 6 mA, iR = 3 mA
trr
115
ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
100
Pulse Width = 100 ms
IF = 10 mA
Duty Cycle = 50 %
trise
10
tfall
1
0.1
18341
1
10
100
RL – Load Resistance (kΩ)
Fig. 1 Forward Resistance vs. Forward Current
100.00
10.00
1.00
0.10
0.01
0.5 0.6 0.7 0.8 0.9 1.0
18325
VF - Forward Voltage ( V )
Fig. 3 Forward Current vs. Forward Voltage
0.30
f = 1 MHz
0.25
0.20
0.15
0.10
0.05
0.00
0
18333
4 8 12 16 20 24 28
VR - Reverse V oltage (V)
Fig. 2 Diode Capacitance vs. Reverse Voltage
120
100
80
60
40
20
18329
0
0.01
0.1 1.0 10 100 1000
IR - Reverse Current ( µA )
Fig. 4 Reverse Voltage vs. Reverse Current
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2
Document Number 85698
Rev. 1.2, 26-Apr-04