BAP51-06W(2008) Ver la hoja de datos (PDF) - NXP Semiconductors.
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BAP51-06W Datasheet PDF : 8 Pages
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NXP Semiconductors
BAP51-06W
General purpose PIN diode
Table 6. Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ISL
isolation
VR = 0 V
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
IF = 0.5 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
IF = 1 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
IF = 10 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τL
charge carrier life time when switched from IF = 10 mA to IR = 6 mA;
RL = 100 Ω; measured at IR = 3 mA
LS
series inductance
IF = 100 mA; f = 100 MHz
[1] Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Min Typ Max Unit
-
17 -
dB
-
13 -
dB
-
12 -
dB
-
0.44 -
dB
-
0.50 -
dB
-
0.54 -
dB
-
0.33 -
dB
-
0.39 -
dB
-
0.43 -
dB
-
0.19 -
dB
-
0.24 -
dB
-
0.28 -
dB
-
0.55 -
µs
-
1.6 -
nH
mld508
500
Cd
(fF)
400
300
200
100
0
0
4
8
12
16
20
VR (V)
Fig 1.
f = 100 MHz; Tj = 25 °C.
Diode capacitance as a function of reverse
voltage; typical values
102
rD
(Ω)
10
mld507
1
10−110−1
1
10
102
IF (mA)
Fig 2.
f = 100 MHz; Tj = 25 °C.
Diode forward resistance as a function of
forward current; typical values
BAP51-06W_1
Product data sheet
Rev. 01 — 26 May 2008
© NXP B.V. 2008. All rights reserved.
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