BA892V-04W-GS08 Ver la hoja de datos (PDF) - Vishay Semiconductors
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BA892V-04W-GS08 Datasheet PDF : 5 Pages
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BA892V-04W
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Reverse voltage
IR = 10 µA
VR
35
V
Reverse current
VR = 20 V
IR
20
nA
Forward voltage
IF = 100 mA
VF
1.1
V
Diode capacitance
f = 1 MHz, VR = 0
CD
1.1
pF
f = 1 MHz, VR = 1 V
CD
0.9
1.2
pF
f = 1 MHz, VR = 3 V
CD
0.85
1.1
pF
Forward resistance
f = 100 MHz, IF = 1 mA
rf
0.6
Ω
f = 100 MHz, IF = 3 mA
rf
0.45
0.7
Ω
f = 100 MHz, IF = 10 mA
rf
0.34
0.5
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, iR = 3 mA
trr
90
ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF - Forward Current (mA)
Figure 1. Forward Resistance vs. Forward Current
100.00
10.00
1.00
0.10
0.01
0.5 0.6 0.7 0.8 0.9 1.0
18324
VF - Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
1.2
f = 1 MHz
1.0
0.8
0.6
0.4
0.2
0.0
0
18332
4 8 12 16 20 24 28
VR - Reverse V oltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
70
60
50
40
30
20
10
18328
0
0.01
0.1 1.0 10 100 1000
IR - Reverse Current ( µA )
Figure 4. Reverse Voltage vs. Reverse Current
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2
Document Number 85649
Rev. 1.2, 24-Jun-05
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