BA033CC0FP(2011) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
BA033CC0FP Datasheet PDF : 12 Pages
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BA□□DD0T Series,BA□□CC0T Series,BA□□CC0FP Series
BA□□DD0WT Series,BA□□DD0HFP Series,BA□□CC0WT Series,BA□□CC0WFP Series
Technical Note
●Other Points of Caution
1) Protection Circuits
Over-current Protection Circuit
A built-in over-current protection circuit corresponding to the current capacity prevents the destruction of the IC when there
are load shorts. This protection circuit is a “7”-shaped current control circuit that is designed such that the current is restricted
and does not latch even when a large current momentarily flows through the system with a high-capacitance capacitor.
However, while this protection circuit is effective for the prevention of destruction due to unexpected accidents, it is not
suitable for continuous operation or transient use. Please be aware when creating thermal designs that the overcurrent
protection circuit has negative current capacity characteristics with regard to temperature (Refer to Figs.4 and 16).
Thermal Shutdown Circuit (Thermal Protection)
This system has a built-in temperature protection circuit for the purpose of protecting the IC from thermal damage.
As shown above, this must be used within the range of acceptable loss, but if the acceptable loss happens to be
continuously exceeded, the chip temperature Tj increases, causing the temperature protection circuit to operate.
When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation
immediately after the chip temperature Tj decreases, so the output repeats the ON and OFF states (Please refer to
Figs.12 and 24 for the temperatures at which the temperature protection circuit operates).
There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to
avoid leaving the IC in the overloaded state.
Reverse Current
In order to prevent the destruction of the IC when a reverse current flows through the IC, it is recommended that a diode
be placed between the Vcc and Vo and a pathway be created so that the current can escape (Refer to Fig.35).
Reverse current
Vcc
OUT
CTL GND
Fig. 36:Bypass diode
2) This IC is bipolar IC that has a P-board (substrate) and P+ isolation layer between each devise, as shown in Fig.36. A P-N
junction is formed between this P-layer and the N-layer of each device, and the P-N junction operates as a parasitic diode
when the electric potential relationship is GND> Terminal A, GND> Terminal B, while it operates as a parasitic transistor
when the electric potential relationship is Terminal B GND> Terminal A. Parasitic devices are structurally inevitable in the
IC. The operation of parasitic devices induces mutual interference between circuits, causing malfunctions and eventually
the destruction of the IC. It is necessary to be careful not to use the IC in ways that would cause parasitic elements to
operate. For example, applying a voltage that is lower than the GND (P-board) to the input terminal.
Transistor (NPN)
(Pin B)
C
B
E
NP
P+
N
N
P
Parasitic element
or transistor
GND
(Pin A)
Resistor
(Pin B)
GND
P+
N
P+
N
P
P
N
P+
N
Parasitic element
GND
BC
E
GND
Parasitic element
or transistor
(Pin A)
Parasitic element
GND
Fig. 37: Example of the basic structure of a bipolar IC
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9/11
2011.03 - Rev.C
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