BA3121F-E2 Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza

componentes Descripción

Fabricante

BA3121F-E2

Ground Isolation Amplifier

ROHM Semiconductor 

BA3121F, BA3123F

Technical Note

●Electrical characteristics (unless otherwise noted, Ta = 25C, VCC = 12V, f = 1kHz, Rg = 1.8k)

Parameter

Quiescent current

Output noise voltage

Voltage gain

Maximum output voltage

Total harmonic distortion

Common-mode rejection ratio

Common-made voltage

Ripple rejection ratio

Symbol Min. Typ. Max.

IQ

5.6 9.0 14.0

VNO

－

3.5 8.0

GV

-1.5 -0.04 1.5

VOM

1.8 2.0

－

THD

－ 0.002 0.02

CMRR 41

57

－

VCM

2.5 3.75 －

RR

72

80

－

Channel separation

CS

Slew rate

SR

Input resistance

RIN

◎Not designed for radiation resistance

－

82

－

－

2.0

－

44

55

66

Unit

mA

μVrms

dB

Vrms

％

dB

Vrms

dB

dB

V/μS

kΩ

Conditions

VIN＝0Vrms

BPF＝20Hz-20kHz

VO＝－10dBm, Rg＝0Ω

THD＝0.1％, Vcc＝8V

VO＝0.7Vrms

Vcc＝8V,CMRR＝40dB

fRR＝100Hz,VRR＝－10dBm,

Rg＝0Ω

VIN＝－10dBm,

Rg＝1.8kΩ/OPEN

●Electrical characteristics curves

Fig.1 Quiescent current

vs. power supply voltage

Fig.2 Maximum output voltage

vs. power supply voltage

Fig.3 Output noise voltage

vs. power supply voltage

Fig.4 Voltage gain

vs. power supply voltage

Fig.5 Voltage gain vs. frequency

Fig.6 Channel separation

f

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© 2009 ROHM Co., Ltd. All rights reserved.

2009.08 - Rev.A

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