DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BA10358N Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
BA10358N
ROHM
ROHM Semiconductor ROHM
BA10358N Datasheet PDF : 5 Pages
1 2 3 4 5
Standard ICs
BA10358 / BA10358F / BA10358FV / BA10358N
Electrical characteristics (unless otherwise noted, Ta = 25°C, VCC = +5 V)
Parameter
Symbol Min. Typ. Max. Unit
Input offset voltage
VIO
2
7
mV
Input offset current
IIO
5
50
nA
Input bias current
IB
45
250
nA
High-amplitude voltage gain
AV
25
100
— V / mV
Common-mode input voltage
VICM
0
— VCC – 1.5 V
Output voltage
VO
0
— VCC – 1.5 V
Common-mode rejection ratio
CMRR
65
80
dB
Power supply voltage rejection ratio PSRR
65
100
dB
Quiescent current
IQ
0.7
1.2
mA
Channel separation
CS
120
dB
Maximum
output current
source
sink
Isource
10
20
mA
Isink
10
20
mA
Conditions
RS = 50
RL м 2k, VCC = 15V
RL = 2k
RS = 50
RL = , on All Op - Amps
f = 1 kHz input conversion
VIN+ = 1V, VIN– = 0V, VO = 0V
VIN– = 1V, VIN+ = 0V, VO = VCC
Electrical characteristic curves
1200
1000
BA10358N
800 BA10358
600
BA10358F
400
BA10358FV
200
0
0
25 50 75 85 100 125 150
AMBIENT TEMPERATURE: Ta (°C)
Fig. 1 Power dissipation vs. ambient
temperature
20
100k
1k 15V
15
VIN
Vo
7V +
2k
10
3
VCC
A IQ
2
+
1
0
10
20
30
40
POWER SUPPLY VOLTAGE: V+ (V)
Fig. 2 Quiescent current vs. power
supply voltage
100
80
60
40
20
140
10M
120
0.1µ
VIN
100
+
VCC
V0
2
80
60
40
20
0
1 10 100 1k 10k 100k 1M 10M
FREQUENCY: f (Hz)
Fig. 3 Open loop voltage gain vs.
frequency
100
75
50
25
0
100
1k
10k
100k
1M
FREQUENCY: f (Hz)
Fig. 4 Maximum output voltage
vs.frequency
0
– 20
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (°C)
Fig. 5 Input bias current vs. ambient
temperature
0
0
10
20
30
40
POWER SUPPLY VOLTAGE: V+ (V)
Fig. 6 Input bias current vs. power
supply voltage
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]