DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

B2100(2010) Ver la hoja de datos (PDF) - Diodes Incorporated.

Número de pieza
componentes Descripción
Fabricante
B2100
(Rev.:2010)
Diodes
Diodes Incorporated. Diodes
B2100 Datasheet PDF : 4 Pages
1 2 3 4
B270 - B2100
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
B270
70
49
B280
B290
80
90
56
63
2.0
50
B2100
Unit
100
V
70
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Terminal (Note 4)
Operating and Storage Temperature Range
Symbol
RθJT
TJ, TSTG
Value
15
-65 to +150
Unit
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Forward Voltage Drop
Characteristic
Leakage Current (Note 5)
Total Capacitance
Symbol Min
Typ
Max Unit
Test Condition
VF
-
-
0.79
0.69
V
IF = 2.0A, TA = 25°C
IF = 2.0A, TA = 100°C
IR
-
-
-
-
7.0
2.0
mA @ Rated VR, TA = 25°C
@ Rated VR, TA = 100°C
CT
-
-
75
pF VR = 4V, f = 1MHz
Notes:
4. Valid provided that terminals are kept at ambient temperature.
5. Short duration pulse test used to minimize self-heating effect.
10
1.0
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
Tj = 125°C
Tj = 100°C
Tj = 25°C
B270 - B2100
Document number: DS30021 Rev. 10 - 2
2 of 4
www.diodes.com
September 2010
© Diodes Incorporated

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]