AWT6172 Ver la hoja de datos (PDF) - ANADIGICS

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AWT6172

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

ANADIGICS 

AWT6172

ELECTRICAL CHARACTERISTICS

Table 2: Absolute Maximum Ratings

ParaMeter

MIN MaX uNIts

Supply Voltage (VBATT)

-0.5 +6

V

RF Input Power (RFIN)

-

12

dBm

Control Voltage (VRAMP)

-0.3 3.0

V

Storage Temperature (TSTG)

-55 150

°C

Stresses in excess of the absolute ratings may cause permanent

damage. Functional operation is not implied under these

conditions. Exposure to absolute ratings for extended periods

of time may adversely affect reliability.

Table 3: ESD Ratings

ParaMeter

MetHOD ratING uNIt

ESD Threshold voltage (RF ports)

HBM

2.5

kV

ESD Threshold voltage (control inputs)

HBM

2.5

kV

Although protection circuitry has been designed into this device, proper precautions

should be taken to avoid exposure to electrostatic discharge (ESD) during handling and

mounting. Human body model HBM employed is resistance = 1500Ω, capacitance = 100pF.

ParaMeter

Logic High Voltage

Logic Low Voltage

Logic High Current

Logic Low Current

Table 4: Digital Inputs

sYMBOL

VIH

VIL

|IIH|

|IIL|

MIN tYP MaX uNIts

1.2

-

3.0

V

-0.5

-

0.5

V

-

-

30

A

-

-

30

A

4

PRELIMINARY DATA SHEET - Rev 1.4

02/2009

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