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AWT6172

GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control

ANADIGICS 

AWT6172

GSM/GPRS/EDGE Power Amplifier

Module with Integrated Power Control

PRELIMINARY DATA SHEET - Rev 1.4

features

• InGaP HBT Technology

• Low profile 1.1 mm

• Small Package Outline 6 mm x 6 mm

• EGPRS Capable (class 12)

• Integrated Reference Voltage

GMSK MODE

• Integrated power control (CMOS)

• +35 dBm GSM850/900 Output Power

• +33 dBm DCS/PCS Output Power

• 55 % GSM850/900 PAE

• 52 % DCS/PCS PAE

• Power control range > 50 dB

EDGE MODE

• +28.5 dBm GSM850/900 Output Power

• +27.5 dBm DCS/PCS Output Power

• -66 dBc Typical ACPR (400 kHz)

• -78 dBc Typical ACPR (600 kHz)

APPLICATIONS

• Dual/Tri/Quad Band Handsets, PDAs and Data

Devices

PRODUCT DESCRIPTION

This quad band power amplifier module supports dual,

tri and quad band applications for both GMSK and

8-PSK modulation schemes. There are two amplifier

chains, one to support GSM850/900 bands, the other

for DCS/PCS bands.

The module includes an integrated power control

scheme for use in the GMSK mode. This facilitates

fast and easy production calibration and reduces the

number of external components required to complete

a power control function. The amplifier’s power control

range is typically 55 dB, with the output power set by

applying an analog voltage to VRAMP.

In EDGE mode, the VRAMP pin is disabled and no spe-

cific voltage is required for proper operation. Output

power is controlled by varying the input power.

All of the RF ports for this device are internally matched

to 50Ω.

DCS/PCS_IN

DCS/PCS_OUT

GSM850/900_IN

Figure 1: Block Diagram

02/2009

GSM850/900_OUT

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