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AWT6167

GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control

ANADIGICS 

AWT6167

Table 7: Electrical Characteristics for GSM900

(VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty 25%,

ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH)

PARAMETER

MIN TYP MAX UNIT

COMMENTS

Operating Frequency (Fo)

880

-

915 MHz

Input Power

0

3.0

5

dBm

Output Power, PMAX

34.5 35.0

-

dBm Freq = 880 to 915 MHz

Degraded Output Power

32.5 33.5

-

dBm

VBATT = 3.0 V, TC = 85 OC,

PIN = 0 dBm

PAE @ PMAX

-

56

-

% Freq = 880 to 915 MHz

Forward Isolation 1

-

-35

-

dBm TX_EN = LOW, PIN = 5 dBm

Forward Isolation 2

-

-25

-

dBm

TX_EN = HIGH, VRAMP = 0.2 V,

PIN = 5 dBm

Cross Isolation

(2Fo @ DCS Port)

-

-30

-

dBm VRAMP = 0.2 V to VRAMP_MAX

Harmonics

2fo

n*Fo, (n > 3), Fo [ 12.75 GHz

-

-

-25

-30

-

-

dBm Over all output power levels

VSWR = 8:1 All Phases, POUT [ 34.5 dBm

Stability

-

-

-36 dBm FOUT < 1 GHz

-

-

-30 dBm FOUT > 1 GHz

Ruggedness

-

-

10:1

VSWR

All load phases,

POUT < 34.5 dBm

RX Noise Power

FTX = 915 MHz,

-

-84

-

dBm

RBW = 100 kHz,

FRX = 925 to 935 MHz,

POUT [ 34.5 dBm

FTX = 915 MHz,

-

-87

-

dBm

RBW = 100 kHz,

FRX = 935 to 960 MHz,

POUT [ 34.5 dBm

Input VSWR

-

1.5:1

-

- Over all output power levels

ADVANCED PRODUCT INFORMATION - Rev 0.1

5

01/2005

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