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AWT6167

GSM900/DCS Dual Band Power Amplifier Module With Integrated Power Control

ANADIGICS 

ELECTRICAL CHARACTERISTICS

AWT6167

Table 2: Absolute Minimum and Maximum Ratings

PARAMETER

MIN MAX UNIT

Supply Voltage (VBATT)

-

+7

V

RF Input Power (RFIN)

-

11

dBm

Control Voltages (VRAMP)

-0.3 1.8

V

Storage Temperature (TSTG)

- 55 150

°C

Stresses in excess of the absolute ratings may cause

permanent damage. Functional operation is not implied under

these conditions. Exposure to absolute ratings for extended

periods of time may adversely affect reliability.

Table 3: ESD Ratings

PARAMETER

METHOD RATING UNIT

ESD Threshold voltage (RF ports)

HBM

>2.5

kV

ESD Threshold voltage (control inputs)

HBM

>2.5

kV

Although protection circuitry has been designed into this device, proper precau-

tions should be taken to avoid exposure to electrostatic discharge (ESD) during

handling and mounting. Human body model HBM employed is resistance = 1500 Ω,

capacitance = 100 pF.

Table 4: Digital Inputs

PARAMETER

Logic High Voltage (VIH)

Logic Low Voltage (VIL)

Logic High Current (IIH)

Logic Low Current (IIL)

MIN TYP MAX UNIT

1.2

-

3.0

V

-

-

0.5

V

-

-

30

µA

-

-

30

µA

Table 5: Control Logic Table

MODE

Tx_EN BS

PA Enable

HIGH X

GSM900 Mode HIGH LOW

DCS Mode

HIGH HIGH

PA Disable

LOW

X

ADVANCED PRODUCT INFORMATION - Rev 0.1

3

01/2005

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