AWT6134 Ver la hoja de datos (PDF) - ANADIGICS

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Fabricante

AWT6134

KPCS/CDMA 3.4V/28dBm Linear Power Amplifier Module

ANADIGICS 

FEATURES

• InGaP HBT Technology

• High Efficiency: 39%

• Low Quiescent Current: 48 mA

• Low Leakage Current in Shutdown Mode: <1 µA

• VREF = +2.8 V (+2.7 V min over temp)

• Optimized for a 50 Ω System

• Low Profile Miniature Surface Mount Package:

1.56mm Max

• CDMA 1XRTT Compliant

• CDMA 1xEV-DO Compliant

APPLICATIONS

• Korean PCS CDMA Wireless Handsets

AWT6134

KPCS/CDMA 3.4V/28dBm

Linear Power Amplifier Module

PRELIMINARY DATA SHEET - Rev 1.0

M7 Package

10 Pin 4mm x 4mm

Surface Mount Module

PRODUCT DESCRIPTION

The AWT6134 meets the increasing demands for

higher efficiency and linearity in CDMA 1XRTT

handsets. The PA module is optimized for VREF = +2.8 V,

a requirement for compatibility with the Qualcomm

6000 chipset. The device is manufactured on an

advanced InGaP HBT MMIC technology offering

state-of-the-art reliability, temperature stability, and

ruggedness. Selectable bias modes that optimize

efficiency for different output power levels, and a

shutdown mode with low leakage current, increase

handset talk and standby time. The self-contained

4mm x 4mm surface mount package incorporates

matching networks optimized for output power,

efficiency, and linearity in a 50 Ω system.

GND at slug (pad)

VCC 1

10 VCC

RFIN 2

9 GND

GND 3

8 RFOUT

VMODE 4

Bias Control

7 GND

VREF 5

6 GND

Figure 1: Block Diagram

07/2003

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