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AWT6108

GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control

ANADIGICS 

ELECTRICAL CHARACTERISTICS

Table 2: Absolute Minimum and Maximum Ratings

PARAMETER

MIN MAX UNIT

Supply Voltage (VBATT)

0

7

V

RF Input Power (RFIN)

0

11

dBm

Control Voltage (VRAMP)

-0.3 1.8

V

Storage Temperature (TSTG)

-55 150

°C

Stresses in excess of the absolute ratings may cause permanent

damage. Functional operation is not implied under these conditions.

Exposure to absolute ratings for extended periods of time may

adversely affect reliability.

AWT6108

PARAMETER

Table 3: ESD Ratings

METHOD RATING

UNIT

ESD Threshold Voltage (RF Ports)

HBM

>250

V

ESD Threshold Voltage (Control Inputs)

HBM

>2.5

kV

Although protection circuitry has been designed into this device, proper precautions

should be taken to avoid exposure to electronic discharge (ESD) during handling

and mounting. Human body model (HBM) employed is resistance = 1500 W,

capacitance = 100 pF.

PRELIMINARY DATA SHEET - Rev 1.0

3

08/2003

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