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ATTINY13V-10PI

8-bit Microcontroller with 1K Bytes In-System Programmable Flash

Atmel Corporation 

Preventing EEPROM

Corruption

2535G–AVR–01/07

ATtiny13

The next code examples show assembly and C functions for reading the EEPROM. The

examples assume that interrupts are controlled so that no interrupts will occur during

execution of these functions.

Assembly Code Example

EEPROM_read:

; Wait for completion of previous write

sbic EECR,EEPE

rjmp EEPROM_read

; Set up address (r17) in address register

out EEARL, r17

; Start eeprom read by writing EERE

sbi EECR,EERE

; Read data from data register

in r16,EEDR

ret

C Code Example

unsigned char EEPROM_read(unsigned char ucAddress)

{

/* Wait for completion of previous write */

while(EECR & (1<<EEPE))

;

/* Set up address register */

EEARL = ucAddress;

/* Start eeprom read by writing EERE */

EECR |= (1<<EERE);

/* Return data from data register */

return EEDR;

}

During periods of low VCC, the EEPROM data can be corrupted because the supply volt-

age is too low for the CPU and the EEPROM to operate properly. These issues are the

same as for board level systems using EEPROM, and the same design solutions should

be applied.

An EEPROM data corruption can be caused by two situations when the voltage is too

low. First, a regular write sequence to the EEPROM requires a minimum voltage to

operate correctly. Secondly, the CPU itself can execute instructions incorrectly, if the

supply voltage is too low.

EEPROM data corruption can easily be avoided by following this design

recommendation:

Keep the AVR RESET active (low) during periods of insufficient power supply voltage.

This can be done by enabling the internal Brown-out Detector (BOD). If the detection

level of the internal BOD does not match the needed detection level, an external low

VCC reset protection circuit can be used. If a reset occurs while a write operation is in

progress, the write operation will be completed provided that the power supply voltage is

sufficient.

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