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ATF-34143 Ver la hoja de datos (PDF) - Avago Technologies

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ATF-34143 Datasheet PDF : 14 Pages
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ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 120 mA
Freq P1dB
Id
G1dB
PAE1dB
P3dBm
Id
PAE3dB
(GHz) (dBm) (mA)
(dB)
(%)
(dBm)
(mA)
(%)
0.9 20.9
114
25.7
27
22.8
108
44
1.5 21.7
115
21.9
32
23.1
95
53
1.8 21.3
111
20.5
30
23.0
105
47
2
22.0
106
19.5
37
23.7
115
50
4
22.7
110
12.7
40
23.6
111
47
6
23.3
115
9.2
41
24.2
121
44
Gamma
Out_mag
(Mag)
0.34
0.31
0.30
0.28
0.26
0.24
Gamma
Out_ang
(Degrees)
136
152
164
171
-135
-66
ATF-34143 Power Parameters tuned for Power, VDS = 4 V, IDSQ = 60 mA
Freq P1dB
Id
G1dB
PAE1dB
P3dBm
Id
(GHz) (dBm) (mA)
(dB)
(%)
(dBm)
(mA)
0.9 18.2
75
27.5
22
20.5
78
1.5 18.7
58
24.5
32
20.8
59
1.8 18.8
57
23.0
33
21.1
71
2
18.8
59
22.2
32
21.9
81
4
20.2
66
13.9
38
22.0
77
6
21.2
79
9.9
37
23.5
102
PAE3dB
(%)
36
51
45
47
48
46
Gamma
Out_mag
(Mag)
0.48
0.45
0.42
0.40
0.25
0.18
Gamma
Out_ang
(Degrees)
102
117
126
131
-162
-77
80
50
40
30
20
10
Pout
0
Gain
PAE
-10
-30 -20
-10
0
10
20
Pin (dBm)
Figure 20. Swept Power Tuned for Power
at 2 GHz, VDS = 4 V, IDSQ = 120 mA.
80
60
40
20
0
Pout
Gain
PAE
-20
-30
-20
-10
0
10
20
Pin (dBm)
Figure 21. Swept Power Tuned for Power at 2 GHz,
VDS = 4 V, IDSQ = 60 mA.
Notes:
1. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class
B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm
is approached.
2. PAE(%) = ((Pout – Pin)/Pdc) x 100
3. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
6

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