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ATF-34143 Ver la hoja de datos (PDF) - Avago Technologies

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ATF-34143 Datasheet PDF : 14 Pages
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ATF-34143 Typical Performance Curves
35
OIP3
30
25
20
15
10
P1dB
5
3V
4V
0
0 20 40 60 80 100 120 140
IDSQ (mA)
Figure
4 V, 60
6m.AOIaPt32aGnHdzP. [11d,B2]vs.
IDS
and
VDS
Tuned
for
NF
@
20
15
10
5
3V
4V
0
0 20 40 60 80 100 120
CURRENT (mA)
Figure
(VD) at
7. Associated
2 GHz. [1,2]
Gain
vs.
Current
(Id)
and
Voltage
1
0.8
0.6
0.4
0.2
3V
4V
0
0 20 40 60 80 100 120
CURRENT (mA)
Figure 8.
(VDS) at 2
Noise Figure
GHz. [1,2]
vs.
Current
(Id)
and
Voltage
35
OIP3
30
25
20
15
P1dB
10
5
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure
4 V, 60
9m.AOIaPt39a0n0dMPH1zd.B[1v,s2.]IDS
and
VDS
Tuned
for
NF
@
25
20
15
10
5
3V
4V
0
0 20 40 60 80 100 120
CURRENT (mA)
Figure 10. Associated Gain vs. Current (Id) and Voltage
(VD) at 900 MHz. [1,2]
0.7
0.6
0.5
0.4
0.3
0.2
0.1
3V
4V
0
0 20 40 60 80 100 120
CURRENT (mA)
Figure 11. Noise Figure vs. Current (Id) and Voltage
(VDS) at 900 MHz. [1,2]
1.2
25
1.0
20
0.8
0.6
15
0.4
10
60 mA
0.2
40 mA
60 mA
40 mA
20 mA
20 mA
0
0
2.0
4.0
6.0
5
0 1.0 2.0 3.0 4.0 5.0 6.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 4 V.
Figure 13. Associated Gain vs. Frequency and Current
Notes:
at 4 V.
1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4V, 60 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class
B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm
is approached.
4

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