ATF-35143 Ver la hoja de datos (PDF) - Avago Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-35143 Datasheet PDF : 18 Pages
| |||
ATF-35143 Typical Performance Curves, continued
1.50
1.25
1.00
25
5 mA
15 mA
30 mA
20
0.75
15
0.50
0.25
5 mA
15 mA
30 mA
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 2V.
10
5
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
22
1.0
25
20
0.8
20
18
0.6
16
25C
15
-40C 0.4
85C
25C
-40C
85C
10
14
0.2
12
0
0
2
4
6
8
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency and
Temperature, VDS=2V, IDS=15 mA.
5
0
2
4
6
8
FREQUENCY (GHz)
Figure 15. OIP3 and P1dB vs. Frequency and
Temperature[1,2], VDS=2V, IDS=15 mA.
25
2.5
20
2
15
1.5
10
1
5
P1dB 0.5
OIP3
Gain
NF
0
0
0
20
40
60
80
IDS (mA)
Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1]
(Active Bias, 2V, 3.9 GHz).
25
3
20
2.5
15
2
10
1.5
5
1
P1dB
0
OIP3 0.5
Gain
-5
NF
0
0
20
40
60
80
IDS (mA)
Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1]
(Active Bias, 2V, 5.8 GHz).
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as
power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a
constant current source as is typically done with active biasing. As an example, at a VDS = 4V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15
dBm is approached.
5
Share Link: 