ATF-33143 Ver la hoja de datos (PDF) - Avago Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-33143 Datasheet PDF : 17 Pages
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ATF-33143 Power Parameters Tuned for Max P1dB, VDS = 4 V, IDSQ = 80 mA
Freq
P1 dB
Id
(GHz) (dBm)
(mA)
0.9
20.7
89
1.5
21.2
91
1.8
21.1
80
2.0
21.6
81
4.0
23.0
97
6.0
24.0
130
G1dB
PAE1dB
P3dB
Id
(dB)
(%)
(dBm)
(mA)
23.2
33
23.2
102
20.7
36
23.8
116
19.2
40
23.0
94
18.1
44
23.2
89
11.9
48
24.6
135
5.9
36
25.2
136
PAE3dB
(%)
51
51
52
57
48
36
Out_mag
(Mag.)
0.39
0.43
0.43
0.42
0.40
0.37
Out_ang
(°)
160
165
170
174
-150
-124
70
60
Pout
Gain
50
PAE
40
30
20
10
0
-10
-20
-40 -30 -20 -10 0 10 20
Pin (dBm)
Figure 20. Swept Power Tuned for Max P1dB
VDS =4V, IDSQ = 80 mA, 2 GHz.
Notes:
1. Measurements made on ATN LP1 power load pull system.
2. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending
on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done
with active biasing.
3. PAE (%) = ((Pout – Pin) / Pdc) X 100
4. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
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