ATF-33143 Ver la hoja de datos (PDF) - Avago Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-33143 Datasheet PDF : 17 Pages
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ATF-33143 Typical Performance Curves
40
30
40
2V
3V
4V
30
20
20
10
2V
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 6. OIP3, IIP3 vs. Bias[1] at 2 GHz.
10
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 7. OIP3, IIP3 vs. Bias[1] at 900 MHz.
25
20
15
10
5
0
0 20 40 60 80
IDSQ (mA)
Figure 8. P1dB vs. Bias[1,2] at 2 GHz.
2V
3V
4V
100 120
16
1.4
15
1.2
Ga
14
1.0
13
0.8
12
0.6
NF
11
2 V 0.4
3V
4V
10
0.2
0 20 40 60 80 100 120
IDSQ (mA)
Figure 10. NF and Ga vs. Bias[1] at 2 GHz.
25
20
15
10
5
2V
3V
4V
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 9. P1dB vs. Bias[1,2] Tuned for NF @ 4V, 80 mA at
900 MHz.
22
1.2
21
1.0
20
0.8
Ga
19
0.6
18 NF
0.4
17
2 V 0.2
3V
4V
16
0
0 20 40 60 80 100 120
IDSQ (mA)
Figure 11. NF and Ga vs. Bias[1] at 900 MHz.
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher
P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing.
4
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