ATF-13786-TR1 Ver la hoja de datos (PDF) - Unspecified

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ATF-13786-TR1

Surface Mount Gallium Arsenide FET for Oscillators

Unspecified 

ATF-13786 Absolute Maximum Ratings

Symbol

VDS

VGS

VGD

IDS

PT

TCH

TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Gate-Drain Voltage

Drain Current

Power Dissipation[2,3]

Channel Temperature

Storage Temperature

Units

V

V

V

mA

mW

°C

°C

Absolute Maximum[1]

4

-4

-6

IDSS

225

150

-65 to +150

Thermal Resistance[2]: θjc = 325°C/W

Notes:

1. Operation of this device above

any one of these conditions

may cause permanent damage.

2. TCASE = 25oC (TCASE is defined

to be the temperature at the

ends of pins 2 and 4 where

they contact the circuit

board).

3. Derate at 3.1 mW/oC for

TC␣ >␣ 60 oC.

ATF-13786 Electrical Specifications, TC = 25°C, VDS = 3 V, IDS = 40 mA[4]

(unless noted)

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

|S21|2

P1 dB

G1 dB

PN

Insertion Power Gain

Power at 1 dB Gain Compression

1 dB Compressed Gain

Phase Noise (100 kHz offset)[5]

f = 10 GHz

f = 10 GHz

f = 10 GHz

f = 10 GHz

dB

dBm

dB

dBc/Hz

6.0

15 16.5

6.5 7.5

-110

gm

Transconductance

VDS = 3 V, VGS = 0 V

mS

25 55

IDSS

Saturated Drain Current

VDS = 3 V, VGS = 0 V

mA

50 70 100

VP

Pinchoff Voltage

VDS = 3 V, IDS = 1 mA

V

-2.0 -1.5 -0.5

VBDG

Gate - Drain Breakdown Voltage

IDG = 0.1 mA

V

6.5

7

Notes:

4. Recommended maximum bias conditions for use as an oscillator.

5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance.

Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator.

5-44

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