ATF-54143 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-54143
HP => Agilent Technologies
ATF-54143 Datasheet PDF : 16 Pages
| |||
ATF-54143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 60 mA
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
Gm
Transconductance
Vds = 3V, gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 - 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -3V
NF
Noise Figure [1]
f = 2 GHz Vds = 3V, Ids = 60 mA
f = 900 MHz Vds = 3V, Ids = 60 mA
Ga
Associated Gain [1]
f = 2 GHz Vds = 3V, Ids = 60 mA
f = 900 MHz Vds = 3V, Ids = 60 mA
OIP3
Output 3rd Order
f = 2 GHz Vds = 3V, Ids = 60 mA
Intercept Point[1]
f = 900 MHz Vds = 3V, Ids = 60 mA
P1dB
1dB Compressed
Output Power [1]
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.4
0.18
—
230
—
—
—
15
—
33
—
—
—
Typ.[2]
0.59
0.38
1
410
—
0.5
0.3
16.6
23.4
36.2
35.5
20.4
18.4
Max.
0.75
0.52
5
560
200
0.9
—
18.5
—
—
—
—
—
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
Output
Matching Circuit
DUT
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit repre-
sents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from
actual measurements.
3
Share Link: