ATF-331M4 Ver la hoja de datos (PDF) - HP => Agilent Technologies
Número de pieza
componentes Descripción
Fabricante
ATF-331M4 Datasheet PDF : 17 Pages
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ATF-331M4 Typical Performance Curves, continued
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency at 4 V, 60 mA.
30
25
20
15
10
5
0
0
2
4
6
8
10
FREQUENCY (GHz)
Figure 13. Associated Gain vs. Frequency
at 4V, 60 mA.
35
30
25
20
15
10
85°C
5
25°C
-40°C
0
01 2 3 4 5 6 78
FREQUENCY (GHz)
Figure 15. P1dB, OIP3 vs. Frequency and
Temp at Vd = 4V, Ids = 60 mA.
35
3.5
30
3.0
P1dB
25
OIP3
Gain
2.5
NF
20
2.0
15
1.5
10
1.0
5
0.5
0
0
0
20
40
60
80 100
Idsq (mA)
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
25
2.0
85°C
25°C
-40°C
20
1.5
15
1.0
10
0.5
5
0
0
2
4
6
8
FREQUENCY (GHz)
Figure 14. Fmin & Ga vs. Frequency and Temp.
Vd = 4V, Ids = 60 mA.
35
3.5
30
3.0
P1dB
25
OIP3
Gain
2.5
NF
20
2.0
15
1.5
10
1.0
5
0.5
0
0
0
20
40
60
80 100
Idsq (mA)
Figure 17. OIP3, P1dB, NF at 5.8 GHz.
Notes:
1. Measurements made on fixed tuned
production test board that was tuned for
optimal gain match with reasonable noise
figure at 4V 60 mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and a
realizable match based on production test
board requirements. Circuit losses have been
de-embedded from actual measurements.
2. Quiescent drain current, Idsq, is set with zero
RF drive applied. As P1dB is approached, the
drain current may increase or decrease
depending on frequency and dc bias point. At
lower values of Idsq the device is running
closer to class B as power output approaches
P1dB. This results in higher P1dB and higher
PAE (power added efficiency) when compared
to a device that is driven by a constant
current source as is typically done with active
biasing.
5
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