DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ATF-331M4 Ver la hoja de datos (PDF) - HP => Agilent Technologies

Número de pieza
componentes Descripción
Fabricante
ATF-331M4 Datasheet PDF : 17 Pages
First Prev 11 12 13 14 15 16 17
ATF-331M4 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq.
S11
S21
GHz
Mag. Ang.
dB Mag. Ang.
dB
0.5
0.81 -93.00
23.11 14.30 127.30
0.8
0.78 -120.00
19.90 9.89 112.40
1.0
0.77 -133.00
19.03 8.94 105.60
1.5
0.75 -152.00
15.74 6.12 93.43
1.8
0.74 -160.00
14.50 5.31 87.90
2.0
0.74 -164.00
14.24 5.15 84.80
2.5
0.72 -171.00
11.29 3.67 77.77
3.0
0.69 -175.00
10.21 3.24 71.63
4.0
0.71 163.00
7.64 2.41 52.93
5.0
0.73 150.00
5.93 1.98 41.40
6.0
0.71 141.00
4.81 1.74 28.60
7.0
0.73 124.00
3.75 1.54 14.30
8.0
0.74 113.00
3.52 1.50 6.20
9.0
0.76 97.90
3.29 1.46 -5.37
10.0
0.79 83.70
2.67 1.36 -18.90
11.0
0.86 62.10
0.83 1.10 -33.30
12.0
0.87 62.30
0.00 1.00 -38.80
13.0
0.88 52.20
-0.82 0.91 -50.80
14.0
0.89 44.70
-1.41 0.85 -60.10
15.0
0.92 39.00
-3.22 0.69 -69.20
16.0
0.94 33.30
-4.88 0.57 -76.60
17.0
0.94 28.20
-5.04 0.56 -82.80
18.0
0.93 24.70
-6.02 0.50 -86.90
-28.64
-26.56
-25.68
-23.88
-22.85
-22.27
-20.82
-19.25
-17.65
-17.08
-16.48
-15.65
-15.24
-15.14
-14.89
-14.89
-14.42
-14.89
-15.39
-15.65
-18.42
-17.59
-17.72
S12
Mag. Ang.
0.037
0.047
0.052
0.064
0.072
0.077
0.091
0.109
0.131
0.140
0.150
0.165
0.173
0.175
0.180
0.180
0.190
0.180
0.170
0.165
0.120
0.132
0.130
53.90
48.30
46.80
45.83
45.73
45.83
45.73
45.27
35.20
30.07
22.23
11.90
7.07
-1.87
-13.17
-25.67
-29.70
-40.67
-48.97
-57.33
-64.27
-70.77
-75.60
S22
Mag. Ang.
0.37 -161.30
0.43 -169.07
0.45 -173.33
0.48 178.37
0.48 174.33
0.49 171.87
0.49 165.90
0.51 162.80
0.51 138.63
0.51 135.70
0.52 118.43
0.53 111.93
0.53 111.10
0.54 95.43
0.54 80.60
0.54 67.90
0.60 61.93
0.65 51.07
0.69 41.93
0.72 32.27
0.75 26.33
0.77 19.97
0.79 15.07
MSG/MAG
dB
25.87
23.23
22.35
19.81
18.68
18.25
16.06
14.73
11.41
9.89
8.31
7.56
7.52
7.31
7.10
6.92
6.50
5.93
5.76
5.53
5.19
5.22
3.90
Typical Noise Parameters, VDS = 4 V, IDS = 60 mA
Freq
Fmin
GHz
dB
Γopt
Mag.
Γopt
Ang.
Rn/50
Ga
dB
0.50
0.38
0.90
0.42
1.00
0.43
1.50
0.47
1.80
0.5
2.00
0.52
2.50
0.56
3.00
0.61
4.00
0.7
5.00
0.79
6.00
0.88
7.00
0.97
8.00
1.06
9.00
1.16
10.00
1.25
0.316
0.314
0.314
0.321
0.329
0.336
0.358
0.386
0.454
0.53
0.606
0.67
0.714
0.728
0.703
0.7
0.06
28.9
0.06
35.5
0.06
65.7
0.05
81.9
0.05
91.9
0.05
114.3
0.04
133.2
0.04
162.3
0.03
-178.1
0.03
-165.1
0.02
-155.8
0.04
-147.4
0.07
-137.1
0.11
-121.9
0.19
22.33
19.23
19.1
16.63
15.86
14.96
13.73
12.58
10.78
9.3
8.32
7.44
6.59
6.36
5.27
40
30
MSG
20
MAG
10
0
|S21|2
-10
0
5
10
15
20
FREQUENCY (GHz)
Figure 22. MSG/MAG and |S21|2 vs.
Frequency at 4V, 60 mA.
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]