ATF-10136-STR Ver la hoja de datos (PDF) - HP => Agilent Technologies
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ATF-10136-STR Datasheet PDF : 3 Pages
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ATF-10136 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+5
-4
-7
IDSS
430
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 350°C/W; TCH = 150°C
1 µm Spot Size[5]
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-10136-TR1
1000
7"
ATF-10136-STR
10
STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.9 mW/°C for
TCASE > 25°C.
4. Storage above +150°C may tarnish
the leads of this package making it
difficult to solder into a circuit.
After a device has been soldered
into a circuit, it may be safely
stored up to 175°C.
5. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
APPLICATIONS PRIMER IIIA for
more information.
ATF-10136 Noise Parameters: VDS = 2 V, IDS = 25 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
RN/50
0.5
0.35
0.93
12
0.80
1.0
0.4
0.85
24
0.70
2.0
0.4
0.70
47
0.46
4.0
0.5
0.39
126
0.36
6.0
0.8
0.36
-170
0.12
8.0
1.1
0.45
-100
0.38
ATF-10136 Typical Performance, T A = 25°C
18
16
15
GA
2.0
12
1.5
1.0
0.5
NFO
9
1.5
6
1.0
0.5
14
GA
12
10
NFO
0
2.0
4.0
6.0 8.0 10.0 12.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
0
0 10 20 30 40 50 60
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2V, f = 4.0 GHz.
30
25
MSG
20
15
|S21|2
10
MAG
5
0
0.5
1.0
2.0 4.0 6.0 8.0 12.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
5-24
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