ATA6626C(2014) Ver la hoja de datos (PDF) - Atmel Corporation
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ATA6626C Datasheet PDF : 29 Pages
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9. Electrical Characteristics (Continued)
5V < VS < 27V, -40°C < Tj < 150°C, unless otherwise specified. All values refer to GND pins
No. Parameters
Test Conditions
Pin Symbol Min.
Typ.
Max.
Unit
8.8
8.9
8.10
8.11
LIN current limitation
VBUS = VBatt_max
Input leakage current at Input leakage current
the receiver including Driver off
pull-up resistor as
specified
VBUS = 0V
VBatt = 12V
Driver off
Leakage current LIN
recessive
8V < VBatt < 18V
8V < VBUS < 18V
VBUS ≥ VBatt
Leakage current when
control unit
disconnected from
ground.
Loss of local ground
must not affect
GNDDevice = VS
VBatt = 12V
0V < VBUS < 18V
communication in the
residual network.
LIN
IBUS_LIM
40
120
200
mA
LIN IBUS_PAS_dom
–1
–0.35
mA
LIN IBUS_PAS_rec
10
20
µA
LIN IBUS_NO_gnd
–10
+0.5
+10
µA
8.12
Leakage current at a
disconnected battery.
Node has to sustain the
current that can flow
under this condition.
Bus must remain
VBatt disconnected
VSUP_Device = GND
0V < VBUS < 18V
operational under this
condition.
LIN
IBUS_NO_bat
0.1
2
µA
8.13
Capacitance on pin LIN
to GND
LIN
CLIN
20
pF
9 LIN Bus Receiver
9.1
Center of receiver
threshold
VBUS_CNT =
(Vth_dom + Vth_rec)/2
9.2 Receiver dominant state VEN = 5V
9.3
Receiver recessive
state
VEN = 5V
LIN
VBUS_CNT
0.475 ×
VS
0.5 ×
VS
0.525 ×
VS
V
LIN
VBUSdom
0.4 × VS
V
LIN
VBUSrec 0.6 × VS
V
9.4
Receiver input
hysteresis
Vhys = Vth_rec – Vth_dom
Pre_Wake detection
9.5 LIN
High-level input voltage
LIN
VBUShys
0.028 ×
VS
0.1 × VS
0.175 ×
VS
V
LIN
VLINH
VS – 2V
VS +
0.3V
V
Pre_Wake detection
9.6 LIN
Activates the LIN receiver LIN
VLINL
–27
Low-level input voltage
VS –
3.3V
V
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Type*
A
A
A
A
A
D
A
A
A
A
A
A
ATA6622C/ATA6624C/ATA6626C [DATASHEET]
19
4986O–AUTO–10/14
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