ATA01502D1C Ver la hoja de datos (PDF) - ANADIGICS
Número de pieza
componentes Descripción
Fabricante
ATA01502D1C Datasheet PDF : 8 Pages
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ATA01502
150
140
B(3dB)~ A / 2 π RF(CIN +CT)
130
VDD = 5.5 V
120
VDD = 5.0 V
110
100
VDD = 4.5 V
90
0 0.2
0.4 0 .6 0.8 1.0 1.2 1.4 1.6
CT (pF)
Figure 5: Bandwidth vs. CT
Note: All performance curves are typical @ TA =25 °C
unless otherwise noted.
VDD = 5.5 V
2500
900
VDD =4.5 V
RF
IIN 1502
50 Ω
120
- 2.2
- 1.7 - 1.2 - 0.7 - 0.2
IIN (mA DC)
Figure 7: Bandwidth vs. IIN
IIN Connection
(Refer to the equivalent circuit diagram) Bonding the
detector cathode to IIN (and thus drawing current from
the ATA01502D1C) improves the dynamic range. The
detector may be used in the reverse direction for input
currents not exceeding 13 mA, however the
specifications for optical overload will not be met.
15.0
13.0
RF
11.0
IIN
I
9.0
50 Ω
7.0
5.0
VDD = 5.5 V
3.0
1.0
VDD = 4.5 V
0.0
-2.2 - 1.7 -1.2 - 0.7 - 0.2
IIN (mA DC)
Figure 6: Transimpedance vs. IIN
VOUT Connection
The output pad should be connected via a coupling
capacitor to the next stage of the receiver channel
(filter or decision circuits), as the output buffers are
not designed to drive a DC coupled 50 ohm load
(this would require an output bias current of
approximately 36 mA to maintain a quiescent 1.8
Volts across the output load). If VOUT is connected to a
high input impedance decision circuit (>500 ohms),
then a coupling capacitor may not be required,
although caution should be exercised since DC
offsets of the photo detector/TIA combination may
cause clipping of subsequent gain or decision
circuits.
3.4
heavy AGC
3.2
3.0
Output Collapse
2.9
2.7
2.5
VDD =5.5 V
2.4
Linear Region
2.2
2.0
1.9
RF
1.7
1.5
1.4
IIN
1502
VOUT
1.2
1.0
0.8
0.7
0.5
0.3
VDD =4.5 V
0.2
0.0
-5
-4
-3
-2
IIN (mA DC)
Figure 8: VOUT vs. IIN
PRELIMINARY DATA SHEET - Rev 2
5
08/2001
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