DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AT89C51RC2(2002) Ver la hoja de datos (PDF) - Atmel Corporation

Número de pieza
componentes Descripción
Fabricante
AT89C51RC2
(Rev.:2002)
Atmel
Atmel Corporation Atmel
AT89C51RC2 Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
AT89C51RB2 / RC2 & T89C51IC2 QualPack
4.3 Wafer Level Reliability
4.3.1 Electromigration
Purpose:
To evaluate the AT56800, AT35500, and AT37000 processes for Metal 1, Metal 3 & Via Electromigration
Reliability.
Test Parameters:
Metal 1 & Metal 3:
Sample Size = 15
Temp = 250C with Joule heating .
J = 3.5E06 A/cm2.
Via:
Sample Size = 15
Temp = 200C with Joule heating.
J = 2.5E06 A/cm2.
Black’s Equation Parameters:
Failure Criteria - 10% increase in resistance. Data taken every 1% change.
n=2
Ea = 0.6eV
Lifetime Predictions:
Metal 1 :
Split 1 - Tf.1% exp = ~ 28 hrs Tf.01% op = ~ 28 hrs x 39706 accel = 127 years.
(Sigma = 2.7118 hours, Acceltemp = 130, Accelcurrent = 306)
Metal 3 :
Split 3 - Tf.1% exp = ~ 140 hrs Tf.01% op = ~ 140 hrs x 39706 accel = 634 years.
(Sigma = 1.8782 hours, Acceltemp = 130, Accelcurrent = 306)
VIA :
Split 4 - Tf.1% exp = ~ 22 hrs Tf.1% op = ~ 22 hrs x 7144 accel = 18 years.
(Sigma = 2.59 hours, Acceltemp = 31.75, Accelcurrent = 225) (9/15 fails)
Conclusion:
All splits pass the minimum 10 years lifetime.
Rev. 1 – 2002 June
9

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]