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AT52BC1661A

16-Mbit Flash + 8-Mbit PSRAM Stack Memory

Atmel Corporation 

Features

• 16-Mbit (x16) Flash and 8-Mbit PSRAM

• 2.7V to 3.3V Operating Voltage

• Low Operating Power

– 27 mA Operating Current

– 53 µA Standby Current

• Extended Temperature Range

Flash

• 2.7V to 3.3V Read/Write

• Access Time – 70 ns

• Sector Erase Architecture

– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

• Fast Word Program Time – 12 µs

• Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase of a

Different Sector

– Supports Reading Any Word by Suspending Programming of Any Other Word

• Low-power Operation

– 12 mA Active

– 13 µA Standby

• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

• VPP Pin for Write Protection and Accelerated Program/Erase Operations

• RESET Input for Device Initialization

• Sector Lockdown Support

• Top/Bottom Boot Block Configuration

• 128-bit Protection Register

• Minimum 100,000 Erase Cycles

PSRAM

• 8-Mbit (512K x 16)

• 2.7V to 3.3V VCC Operating Voltage

• 70 ns Access Time

• Fully Static Operation and Tri-state Output

• ISB0 < 10 µA when Deep Power-Down

Device Number

AT52BC1661A(T)

Flash Configuration

16M (1M x 16)

PSRAM Configuration

8M (512K x 16)

16-Mbit Flash +

8-Mbit PSRAM

Stack Memory

AT52BC1661A

AT52BC1661AT

Preliminary

Rev. 3455A–STKD–11/04

1

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