AT28HC64B-90 Ver la hoja de datos (PDF) - Atmel Corporation

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AT28HC64B-90

64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection

Atmel Corporation 

Device Operation (Continued)

DEVICE IDENTIFICATION: A n e x t r a 6 4 - b y t e s o f

EEPROM memory are available to the user for device

identification. By raising A9 to 12V ± 0.5V and using ad-

dress locations 1FC0H to 1FFFH, the additional bytes

may be written to or read from in the same manner as the

regular memory array.

DC and AC Operating Range

Operating

Temperature (Case)

VCC Power Supply

Com.

Ind.

AT28HC64B-55

0°C - 70°C

5V ± 10%

AT28HC64B-70

0°C - 70°C

-40°C - 85°C

5V ± 10%

AT28HC64B-90

0°C - 70°C

-40°C - 85°C

5V ± 10%

AT28HC64B-120

0°C - 70°C

-40°C - 85°C

5V ± 10%

Operating Modes

Mode

CE

Read

VIL

Write (2)

VIL

Standby/Write Inhibit

VIH

Write Inhibit

X

Write Inhibit

X

Output Disable

X

Chip Erase

VIL

Notes: 1. X can be VIL or VIH.

2. Refer to the AC Write Waveforms diagrams

in this data sheet.

OE

WE

VIL

VIH

VIH

VIL

X (1)

X

X

VIH

VIL

X

VIH

X

VH (3)

VIL

3. VH = 12.0V ± 0.5V.

I/O

DOUT

DIN

High Z

High Z

High Z

DC Characteristics

Symbol Parameter

Condition

ILI

Input Load Current

VIN = 0V to VCC + 1V

ILO

Output Leakage Current

VI/O = 0V to VCC

ISB1

VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1V

ISB2

VCC Standby Current TTL

CE = 2.0V to VCC + 1V

ICC

VCC Active Current

f = 5 MHz; IOUT = 0 mA

VIL

Input Low Voltage

VIH

Input High Voltage

VOL

Output Low Voltage

IOL = 2.1 mA

VOH

Output High Voltage

IOH = -400 µA

Note: 1. ISB1 and ISB2 for the 55 ns part is 40 mA maximum.

Com., Ind.

2-270

AT28HC64B

Min Max Units

10

µA

10

µA

100 (1)

µA

2 (1)

mA

40

mA

0.8

V

2.0

V

.40

V

2.4

V

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