NDM3000 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
NDM3000 Datasheet PDF : 12 Pages
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Typical Electrical Characteristics
1.12
I D = 250µA
1.08
1.04
1
0.96
0.92
-50 -25
0
25
50
75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 13. N-Channel Breakdown Voltage
Variation with Temperature.
1.1
1.08
I D = -250µA
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0
25
50
75
100 125 150
T J , JUNCTION TEMPERATURE (°C)
Figure 14. P-Channel Breakdown Voltage
Variation with Temperature.
1000
800
500
300
200
C iss
C oss
100
50
0.1
f = 1 MHz
V GS = 0V
0.2
0.5
1
2
5
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 15. N-Channel Capacitance
Characteristics.
C rss
30
1000
800
500
300
200
C iss
C oss
100
f = 1 MHz
VGS = 0V
50
0.1
0.2
0.5
1
2
5
10
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 16. P-Channel Capacitance
Characteristics.
C rss
30
10
ID = 3A
8
6
VDS = 10V
20V
15V
4
2
0
0
2
4
6
8
10
12
Q g , GATE CHARGE (nC)
Figure 17. N-Channel Gate Charge Characteristics.
10
I D = -3A
8
6
VDS = -10V
-20V
-15V
4
2
0
0
2
4
6
8
10
12
Q g , GATE CHARGE (nC)
Figure 18. P-Channel Gate Charge Characteristics.
NDM3000 Rev. E
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