AS7C1026C Ver la hoja de datos (PDF) - Alliance Semiconductor

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componentes Descripción

Fabricante

AS7C1026C

5V/3.3V 128K X 8 CMOS SRAM

Alliance Semiconductor 

AS7C1026C

®

Write cycle (over the operating range) 11

Parameter

Write cycle time

Chip enable (CE) to write end

Address setup to write end

Address setup time

Write pulse width

Write recovery time

Address hold from end of write

Data valid to write end

Data hold time

Write enable to output in high Z

Output active from write end

Byte select low to end of write

AS7C1026C-12

Symbol Min

Max

Unit

tWC

12

–

ns

tCW

9

–

ns

tAW

9

–

ns

tAS

0

–

ns

tWP

9

–

ns

tWR

0

–

ns

tAH

0

–

ns

tDW

7

–

ns

tDH

0

–

ns

tWZ

–

6

ns

tOW

1

–

ns

tBW

9

–

ns

Write waveform 1 (WE controlled)11

tWC

tAH

Address

CE

LB, UB

tCW

tWR

tBW

tAS

tAW

tWP

WE

DataIN

DataOUT

tWZ

Data undefined

tDW

Data valid

tDH

tOW

high Z

Notes

5

4, 5

4, 5

12/5/06, v 1.0

Alliance Memory

P. 5 of 9

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