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AS1360-33-T Ver la hoja de datos (PDF) - austriamicrosystems AG

Número de pieza
componentes Descripción
Fabricante
AS1360-33-T
AmsAG
austriamicrosystems AG AmsAG
AS1360-33-T Datasheet PDF : 12 Pages
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AS1360
Datasheet - Application Information
9 Application Information
Figure 14. AS1360 - Typical Application Diagram
+9V
Alkaline
Battery
CIN
1µF *
* Tantalum Capacitor
3
2
AS1360
VIN
VOUT
GND 1
COUT
1µF *
VOUT = 3.3V
Power Dissipation
Power dissipation (PD) of the AS1360 is the sum of the power dissipated by the p-channel MOSFET and the quiescent
current required to bias the internal voltage reference and the internal power amplifier, and is calculated as:
PD (P-Channel MOSFET) = (VIN - VOUT)IOUT
(EQ 1)
Internal power dissipation as a result of the bias current for the internal voltage reference and the error amplifier is cal-
culated as:
PD (Bias) = VINIGND
(EQ 2)
Total AS1360 power dissipation is calculated as:
PD(Total) = PD (P-Channel MOSFET) + PD (Bias)
(EQ 3)
The internal quiescent bias current (2µA, typ) is such that the PD(Bias) term of (EQ 3) can be disregarded and the
maximum power dissipation can be estimated using VIN(MAX) and VOUT(MIN) to obtain a maximum voltage differential
between VIN and VOUT, and multiplying the maximum voltage differential by the maximum output current:
PD = (VIN(MAX)VOUT(MIN))IOUT(MAX)
(EQ 4)
Where:
VIN = 3.3 to 4.1V
VOUT = 3.0V ±2%
IOUT = 1 to 100mA
TAMB(MAX) = 55ºC
PMAX = (4.1V - (3.0V x 0.98)) x 100mA = 116.0mW
Junction Temperature
The AS1360 junction temperature (TJ) can be determined by first calculating the thermal resistance from junction tem-
perature-to-ambient temperature.
Note: Thermal resistance is estimated to be the junction temperature-to-air temperature RΦJA, and is approximately
230°C/W or 335ºC/W (when mounted on 1 square inch of copper). RΦJA will vary depending on PCB layout,
air-flow and application specific conditions.
The AS1360 junction temperature is determined by calculating the rise in TJ above TAMB, and then adding the increase
of TAMB:
TJ = PD(MAX) x RΦJA + TAMB
(EQ 5)
From (EQ 5), the value of TJ can be calculated as:
TJ = 116.0mW x 230ºC/W + 55ºC
Therefore:
TJ = 81.68ºC
www.austriamicrosystems.com/AS1360
Revision 1.04
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