ARF460A Ver la hoja de datos (PDF) - Advanced Power Technology
Número de pieza
componentes Descripción
Fabricante
ARF460A Datasheet PDF : 4 Pages
| |||
D
ARF460A
G
S
TO-247
ARF460B
Common
Source
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
125V 150W 65MHz
The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 125 Volt, 40.68 MHz Characteristics: • Low Cost Common Source RF Package.
•
Output Power = 150 Watts.
• Low Vth thermal coefficient.
•
Gain = 13dB (Class AB)
• Low Thermal Resistance.
•
Efficiency = 75% (Class C)
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
VDSS
VDGO
ID
VGS
PD
RθJC
TJ,TSTG
TL
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF460A/B
UNIT
500
Volts
500
14
Amps
±30
Volts
250
Watts
0.50
°C/W
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
VDS(ON) On State Drain Voltage 1 (ID(ON) = 7A, VGS = 10V)
IDSS
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
gfs
Forward Transconductance (VDS = 25V, ID = 7A)
3.3
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA)
3
4
25
250
±100
5.5
8
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
Volts
µA
nA
mhos
Volts
Share Link: 