Delay Times vs Current
120
100
80
VDS=133V
60 RG=5Ω
TJ=125°C
40 L=100µH
td(off)
td(on)
20
0
0 25 50 75 100 125 150 175
ID, Drain Current (A)
Switching Energy vs Current
2
VDS=133V
RG=5Ω
1.5 TJ=125°C
L=100µH
Eoff
Eon
1
0.5
0
0 25 50 75 100 125 150 175
ID, Drain Current (A)
Operating Frequency vs Drain Current
300
VDS=133V
250
D=50%
RG=5Ω
200
TJ=125°C
150
100
50
0
25 38 50 63 75 88 100
ID, Drain Current (A)
APTM20DHM16T
Rise and Fall times vs Current
160
VDS=133V
140 RG=5Ω
120 TJ=125°C
tf
L=100µH
100
80
tr
60
40
20
0
0 25 50 75 100 125 150 175
ID, Drain Current (A)
Switching Energy vs Gate Resistance
3
VDS=133V
2.5
ID=104A
TJ=125°C
Eoff
L=100µH
2
1.5
Eon
1
0.5
0
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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