APTM20DHM16T Ver la hoja de datos (PDF) - Advanced Power Technology
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APTM20DHM16T Datasheet PDF : 6 Pages
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APTM20DHM16T
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
BVDSS Drain - Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS = 0V, ID = 250µA
200
VGS = 0V,VDS= 200V Tj = 25°C
VGS = 0V,VDS= 160V Tj = 125°C
V
100
µA
500
RDS(on) Drain – Source on Resistance
VGS = 10V, ID = 52A
16 mW
VGS(th) Gate Threshold Voltage
IGSS Gate – Source Leakage Current
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
3
5V
±100 nA
Dynamic Characteristics
Symbol Characteristic
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total gate Charge
Qgs Gate – Source Charge
Qgd Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Eon Turn-on Switching Energy u
Eoff Turn-off Switching Energy v
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 100V
ID = 104A
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 104A
RG = 5W
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
Min Typ Max Unit
7220
2330
pF
146
140
53
nC
67
32
64
ns
88
116
849
µJ
929
936
µJ
986
Diode ratings and characteristics
Symbol Characteristic
IF(AV) Maximum Average Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 100A
IF = 200A
IF = 100A
IF = 100A
VR = 133V
di/dt = 200A/µs
IF = 100A
VR = 133V
di/dt = 200A/µs
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.
Min Typ Max Unit
Tc = 90°C
100
A
1 1.1
1.4
V
Tj = 125°C
0.9
Tj = 25°C
60
ns
Tj = 125°C
110
Tj = 25°C
200
nC
Tj = 125°C
840
APT website – http://www.advancedpower.com
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