APTGF350SK60G Ver la hoja de datos (PDF) - Microsemi Corporation
Número de pieza
componentes Descripción
Fabricante
APTGF350SK60G Datasheet PDF : 6 Pages
| |||
APTGF350SK60G
Capacitance vs Collector to Emitter Voltage
100000
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
50
VCE, Collector to Emitter Voltage (V)
Reverse Bias Safe Operating Area
900
800
700
600
500
400
300
200
100
0
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.09
0.08 0.9
0.07
0.06 0.7
0.05
0.5
0.04
0.03 0.3
0.02
0.01
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Operating Frequency vs Collector Current
180
160
VCE = 400V
140
D = 50%
RG = 1.25Ω
120
TJ = 125°C
100
ZCS
TC=75°C
80
60
40
Hard
ZVS
20 switching
0
50 100 150 200 250 300 350 400 450
IC, Collector Current (A)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
6-6
Share Link: 