APTGF350SK60G Ver la hoja de datos (PDF) - Microsemi Corporation
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APTGF350SK60G Datasheet PDF : 6 Pages
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APTGF350SK60G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
200 µA
1750
VCE(sat) Collector Emitter saturation Voltage
VGE =15V
IC = 360A
Tj = 25°C
Tj = 125°C
2.0 2.5 V
2.2
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = VCE, IC = 4mA
3
VGE = ±20V, VCE = 0V
5V
±300 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 300V
IC = 360A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 360A
RG = 1.25Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 360A
RG = 1.25Ω
VGE = 15V
VBus = 400V
IC = 360A
RG = 1.25Ω
Tj = 125°C
Tj = 125°C
Min Typ Max Unit
17.2
1.88
nF
1.6
1320
1160
nC
800
26
25
150
ns
30
26
25
170
ns
40
17.2
mJ
14
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
IRM Maximum Reverse Leakage Current
VR=600V
IF DC Forward Current
VF Diode Forward Voltage
IF = 400A
IF = 800A
IF = 400A
600
V
Tj = 25°C
Tj = 125°C
750
µA
1500
Tc = 80°C
400
A
Tj = 125°C
1.6 1.8
1.9
V
1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
180
IF = 400A
VR = 400V
Tj = 125°C
220
ns
di/dt =800A/µs Tj = 25°C
1560
nC
Tj = 125°C
5800
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2-6
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